HIGH TEMPERATURE ACID ETCH FOR SILICON

HIGH TEMPERATURE ACID ETCH FOR SILICON

A method includes etching silicon using a mixture of nitric acid and hydrofluoric acid in which less than 6 mols of hydrofluoric acid is used to etch one mol of silicon. The etching may be conducted at an elevated temperature, such as a temperature of at least 70 degrees Celsius.

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Bibliographische Detailangaben
Hauptverfasser: MCMAHON, Patrick, JONCZYK, Ralf
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method includes etching silicon using a mixture of nitric acid and hydrofluoric acid in which less than 6 mols of hydrofluoric acid is used to etch one mol of silicon. The etching may be conducted at an elevated temperature, such as a temperature of at least 70 degrees Celsius.