METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR LASER DEVICE

The present application is provided with: a ridge laminated with a first conductivity type cladding layer, an active layer, and a second conductivity type first cladding layer in order and having a top portion formed to be flat; a first buried layer buried on both side areas of the ridge; a second b...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TAKASE, Tadashi, FUCHIDA, Ayumi, NAKAMURA, Naoki, SUZUKI, Ryoko
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present application is provided with: a ridge laminated with a first conductivity type cladding layer, an active layer, and a second conductivity type first cladding layer in order and having a top portion formed to be flat; a first buried layer buried on both side areas of the ridge; a second buried layer covering the first buried layer and protruding toward the center of the ridge and toward a top portion of the ridge to form an opening formed by protruding portions facing each other; and a second conductivity type second cladding layer buried on the second buried layer and in the opening, wherein a surface of the second buried layer on a side to the top portion of the ridge is formed so as to fit within a surface of the second conductivity type first cladding layer.