TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURING THE SAME

TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURING THE SAME

In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the side...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YANG, Hong, LIU, Yunlong, CHISHOLM, Michael F, XIONG, Yufei
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.