BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION

BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION

Structures including electrical isolation and methods of forming a structure including electrical isolation. A first polycrystalline layer is located in a substrate, and a second polycrystalline layer is positioned between the first polycrystalline layer and a top surface of the substrate. The subst...

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Bibliographische Detailangaben
Hauptverfasser: Adusumilli, Siva P, Stamper, Anthony K, Ellis-Monaghan, John J, Babu, Bojidha, Abou-Khalil, Michel J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Structures including electrical isolation and methods of forming a structure including electrical isolation. A first polycrystalline layer is located in a substrate, and a second polycrystalline layer is positioned between the first polycrystalline layer and a top surface of the substrate. The substrate includes a first portion of the single-crystal semiconductor material that is positioned between the second polycrystalline layer and the top surface of the substrate. The substrate includes a second portion of the single-crystal semiconductor material that is positioned between the first polycrystalline layer and the second polycrystalline layer. The first polycrystalline layer has a thickness. The second polycrystalline layer has a portion with a thickness that is greater than the thickness of the first polycrystalline layer.