SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN

SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN

Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body conta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SRIRATTANA, Nuttapong, BLIN, Guillaume Alexandre, ROY, Ambarish
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.