SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a secon...

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Bibliographische Detailangaben
Hauptverfasser:	TANIYAMA, Tomoshi, SHIRAKO, Kenji, NAKADA, Takayuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.