GERMANIUM-BASED LASER DIODE
A method is presented for forming a germanium (Ge) laser diode with direct bandgap for laser generation. The method includes forming an intrinsic Ge active layer over a substrate, forming a p+ region and an n+ region adjacent the intrinsic Ge active layer, such that the p+ region, the n+ region, and...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method is presented for forming a germanium (Ge) laser diode with direct bandgap for laser generation. The method includes forming an intrinsic Ge active layer over a substrate, forming a p+ region and an n+ region adjacent the intrinsic Ge active layer, such that the p+ region, the n+ region, and the intrinsic Ge active layer collectively define a p-i-n diode, and forming metal contacts to the p+ and n+ regions. |
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