WAFER FORMING METHOD

A wafer forming method includes a peeling layer forming step of applying, to a SiC ingot, a laser beam of such a wavelength as to be transmitted through the SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be formed from a first surface...

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Hauptverfasser: TAKEDA, Noboru, KANEZAKI, Taizo
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creator TAKEDA, Noboru
KANEZAKI, Taizo
description A wafer forming method includes a peeling layer forming step of applying, to a SiC ingot, a laser beam of such a wavelength as to be transmitted through the SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be formed from a first surface of the SiC ingot, to form a peeling layer including a modified section and cracks; and a wafer forming step of immersing the SiC ingot in a liquid and applying an ultrasonic wave to the SiC ingot through the liquid, to thereby peel a part of the SiC ingot with the peeling layer as an interface and form the wafer. In the wafer forming step, the ultrasonic wave is applied to the SiC ingot while a sweep treatment of regularly varying the oscillation frequency of an ultrasonic vibrator is performed.
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subjects CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
FOR PERFORMING MECHANICAL WORK IN GENERAL
GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICALVIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY
PERFORMING OPERATIONS
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
title WAFER FORMING METHOD
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