WAFER FORMING METHOD

A wafer forming method includes a peeling layer forming step of applying, to a SiC ingot, a laser beam of such a wavelength as to be transmitted through the SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be formed from a first surface...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TAKEDA, Noboru, KANEZAKI, Taizo
Format:	Patent
Sprache:	eng
Schlagworte:	CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING FOR PERFORMING MECHANICAL WORK IN GENERAL GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICALVIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY PERFORMING OPERATIONS SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A wafer forming method includes a peeling layer forming step of applying, to a SiC ingot, a laser beam of such a wavelength as to be transmitted through the SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be formed from a first surface of the SiC ingot, to form a peeling layer including a modified section and cracks; and a wafer forming step of immersing the SiC ingot in a liquid and applying an ultrasonic wave to the SiC ingot through the liquid, to thereby peel a part of the SiC ingot with the peeling layer as an interface and form the wafer. In the wafer forming step, the ultrasonic wave is applied to the SiC ingot while a sweep treatment of regularly varying the oscillation frequency of an ultrasonic vibrator is performed.