METHOD FOR FABRICATING GOLD FINE PARTICLES

First, in a first step S101, a semiconductor layer composed of a p type Group III-V compound semiconductor is prepared. The semiconductor layer may be composed of a Group III-V compound semiconductor crystal. Next, in a second step S102, gold is grown on a surface of the above semiconductor layer according to an electroless plating method to form fine gold particles. In this step, for example, an electroless plating solution of gold is brought into contact with a surface of the semiconductor layer such as by immersing the semiconductor layer in the electroless gold plating solution. In addition, in this plating treatment, the liquid temperature of the electroless gold plating solution may be room temperature (about 20° C. to 30° C.).