SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure provides a semiconductor device including a recessed access device (RAD) transistor and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a gate electrode, and a plurality of impurity regions. The substrate includes a buried lay...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure provides a semiconductor device including a recessed access device (RAD) transistor and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a gate electrode, and a plurality of impurity regions. The substrate includes a buried layer. The gate electrode is disposed in the substrate and penetrates through the buried layer. The plurality of impurity regions are disposed in the substrate and on either side of the gate electrode. |
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