LED CHIP AND METHOD FOR MANUFACTURING THE SAME

LED CHIP AND METHOD FOR MANUFACTURING THE SAME

A light emitting diode (LED) chip and a method for manufacturing an LED chip are provided. The LED chip includes a sapphire layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a P electrode, and an N electrode. The N-type semiconductor layer, the light emittin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUANG, Kuo-tung, YANG, Shun-kuei, LIN, Ya-wen, HUANG, Chia-hung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A light emitting diode (LED) chip and a method for manufacturing an LED chip are provided. The LED chip includes a sapphire layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a P electrode, and an N electrode. The N-type semiconductor layer, the light emitting layer, the P-type semiconductor layer, the P electrode are sequentially disposed on a surface of the sapphire layer. The sapphire layer defines multiple preset patterns which extend through the sapphire layer, and the multiple preset patterns are used for reflecting a light of a preset wavelength through a channel defined by the sapphire layer.