OXYGEN GETTERS FOR ACTIVATION OF GROUP V DOPANTS IN II-VI SEMICONDUCTOR MATERIALS

OXYGEN GETTERS FOR ACTIVATION OF GROUP V DOPANTS IN II-VI SEMICONDUCTOR MATERIALS

Disclosed herein are the use of materials that have high affinity for oxygen, "oxygen getters" (e.g. Al), in conjunction with group V dopants (e.g. As) in II-VI materials (e.g. CdTe, Cd(Se)Te), that enable p-type doping by reducing group V oxides found in as-grown II-VI materials, thereby...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: REESE, Matthew Owen, PERKINS, Craig Lyle, COLEGROVE, Eric Michael, METZGER, Wyatt Keith
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Disclosed herein are the use of materials that have high affinity for oxygen, "oxygen getters" (e.g. Al), in conjunction with group V dopants (e.g. As) in II-VI materials (e.g. CdTe, Cd(Se)Te), that enable p-type doping by reducing group V oxides found in as-grown II-VI materials, thereby freeing up the anionic form of the Group V element.