SENSOR AND METHOD FOR MANUFACTURING THE SAME

SENSOR AND METHOD FOR MANUFACTURING THE SAME

A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first ch...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lu, Chang-Lun, Chang, Chung-Chang, Lin, Ming-Hung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.