METHOD OF PROCESSING SUBSTRATE HAVING POLYSILICON LAYER AND SYSTEM THEREOF

The present disclosure provides a method of processing a substrate having a polysilicon layer. The substrate is loaded to a processing system. The processing system includes a polishing module and a cleaning module coupled to the polishing module. The polishing module includes at least a first platen and a second platen. Each of the platens includes a polishing pad for polishing the substrate. An abrasive slurry is applied on the first platen of the polishing module to perform planarization of the polysilicon layer. After planarization, the surface polysilicon layer is treated by a non-ionic surfactant solution to change the surface property to hydrophilic. In the post-CMP cleaning process, organic contaminates on the surface of the polysilicon layer are easily removed by HF solution and SC1 solution, without the need of additional H2SO4 cleaning process.