N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant

N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant

The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Angermann, Jens, Rothe, Carsten, Zöllner, Mike, Denker, Ulrich, Gilge, Kai, Kalisz, Tomas, Canzler, Tobias, Werner, Ansgar, Rosenow, Thomas, Bloom, Francisco, Birnstock, Jan, Fadhel, Omrane
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
CHEMISTRY
ELECTRICITY
METALLURGY
ORGANIC CHEMISTRY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.