RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, a total amount of a basic component including a compound represented by general formula (d0) and an acid-generator component is 25 to 60 parts by weight relative to...

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Bibliographische Detailangaben
Hauptverfasser:	GOHARA, Hiroshi, ONISHI, Koshi, SHIOSAKI, Masahiro, MAEHASHI, Takaya, TODOROKI, Seiji, NGUYEN, KhanhTin, YATSUNAMI, Toshiaki, MICHIBAYASHI, Nobuhiro, IKEDA, Takuya
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, a total amount of a basic component including a compound represented by general formula (d0) and an acid-generator component is 25 to 60 parts by weight relative to 100 parts by weight of a base material component. In formula (d0), Rd0 represents a monovalent organic group; Xd0 represents -O-, -C(═O)-, -O-C(═O)-, -C(═O)-O-, -S- or -SO2-; Yd0 represents a single bond or a divalent hydrocarbon group which may have a substituent; Mm+ represents a m-valent organic cation; and m represents an integer of 1 or moreRd0-Xd0-Yd0-COO⊖(Mm⊕)1/m (d0).