PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE

PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE

Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isol...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Liu, Jun, Violette, Michael P
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element, Other embodiments are described.