DIFFUSION BLOCKING LAYER FOR A COMPOUND SEMICONDUCTOR STRUCTURE

DIFFUSION BLOCKING LAYER FOR A COMPOUND SEMICONDUCTOR STRUCTURE

A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zyskind, John, Spann, John Y
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Beschreibung
Zusammenfassung:A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.