Semiconductor Switch Element and Method of Manufacturing the Same

The application relates to a semiconductor switch element, including: a first vertical transistor device formed in a substrate and having a source region formed on a first side of the substrate and a drain region formed on a second side of the substrate vertically opposite to the first side; a second vertical transistor device formed laterally aside the first vertical transistor device in the same substrate and having a source region formed on the first side of the substrate and a drain region formed on the second side of the substrate; a conductive element arranged on the second side of the substrate and electrically connecting the drain regions of the vertical transistor devices; and a trench extending vertically into the substrate at the second side of the substrate, wherein at least a part of the conductive element is arranged in the trench.