SEMICONDUCTOR DEVICE WITH METALLIZATION STRUCTURE ON OPPOSITE SIDES OF A SEMICONDUCTOR PORTION

SEMICONDUCTOR DEVICE WITH METALLIZATION STRUCTURE ON OPPOSITE SIDES OF A SEMICONDUCTOR PORTION

A semiconductor device includes a semiconductor layer with a thickness of at most 50 μm. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structur...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Poelzl, Martin, Ganitzer, Paul
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a semiconductor layer with a thickness of at most 50 μm. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structure is disposed on a second surface of the semiconductor layer opposite to the first surface. The second metallization structure includes a second copper region with a second thickness.