DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE, FORMED BY UVH WAFER BONDING

DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE, FORMED BY UVH WAFER BONDING

A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack. The first magnetic tunnel junction stack includes a first reference layer. The method also includes forming a second magnetic tunnel junction stack, whe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Mehta, Virat Vasav, Reznicek, Alexander
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack. The first magnetic tunnel junction stack includes a first reference layer. The method also includes forming a second magnetic tunnel junction stack, where the second magnetic tunnel junction stack includes a second reference layer. The method also includes bonding the first magnetic tunnel junction stack to the second magnetic tunnel junction stack with ultra-high vacuum bonding to form the double magnetic tunnel junction device.