NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCESS MEMORY
An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is...
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| creator | Mehta, Virat Vasav Reznicek, Alexander Hekmatshoartabari, Bahman Evarts, Eric Raymond |
| description | An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell. |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS |
| title | NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCESS MEMORY |
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