NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCESS MEMORY

NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCESS MEMORY

An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Mehta, Virat Vasav, Reznicek, Alexander, Hekmatshoartabari, Bahman, Evarts, Eric Raymond
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
STATIC STORES
TRANSFORMERS
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Beschreibung
Zusammenfassung:An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell.