ADJUSTABLE NAND WRITE PERFORMANCE

Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell b...

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Bibliographische Detailangaben
Hauptverfasser:	Cariello, Giuseppe, Falduti, Stefano, Sali, Mauro Luigi, Russo, Ugo
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then write data for the accelerated write request to the target block using a single-level cell encoding.