LIGHT PROPAGATION TIME PIXEL AND LIGHT PROPAGATION TIME SENSOR WITH CORRESPONDING PIXEL
The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corn...
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| creator | FRANKE, Matthias RÖSSLER, Robert |
| description | The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer. |
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The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer.</description><language>eng</language><subject>ANALOGOUS ARRANGEMENTS USING OTHER WAVES ; BASIC ELECTRIC ELEMENTS ; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES ; MEASURING ; PHYSICS ; RADIO DIRECTION-FINDING ; RADIO NAVIGATION ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210513&DB=EPODOC&CC=US&NR=2021141068A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210513&DB=EPODOC&CC=US&NR=2021141068A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FRANKE, Matthias</creatorcontrib><creatorcontrib>RÖSSLER, Robert</creatorcontrib><title>LIGHT PROPAGATION TIME PIXEL AND LIGHT PROPAGATION TIME SENSOR WITH CORRESPONDING PIXEL</title><description>The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer.</description><subject>ANALOGOUS ARRANGEMENTS USING OTHER WAVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>RADIO DIRECTION-FINDING</subject><subject>RADIO NAVIGATION</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj38XT3CFEICPIPcHR3DPH091MI8fR1VQjwjHD1UXD0c1HAoSDY1S_YP0gh3DPEQ8HZPyjINTjA38_F088dopWHgTUtMac4lRdKczMou7mGOHvophbkx6cWFyQmp-allsSHBhsZGBkamhgamFk4GhoTpwoApLsyJA</recordid><startdate>20210513</startdate><enddate>20210513</enddate><creator>FRANKE, Matthias</creator><creator>RÖSSLER, Robert</creator><scope>EVB</scope></search><sort><creationdate>20210513</creationdate><title>LIGHT PROPAGATION TIME PIXEL AND LIGHT PROPAGATION TIME SENSOR WITH CORRESPONDING PIXEL</title><author>FRANKE, Matthias ; RÖSSLER, Robert</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021141068A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>ANALOGOUS ARRANGEMENTS USING OTHER WAVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>RADIO DIRECTION-FINDING</topic><topic>RADIO NAVIGATION</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FRANKE, Matthias</creatorcontrib><creatorcontrib>RÖSSLER, Robert</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FRANKE, Matthias</au><au>RÖSSLER, Robert</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT PROPAGATION TIME PIXEL AND LIGHT PROPAGATION TIME SENSOR WITH CORRESPONDING PIXEL</title><date>2021-05-13</date><risdate>2021</risdate><abstract>The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | ANALOGOUS ARRANGEMENTS USING OTHER WAVES BASIC ELECTRIC ELEMENTS DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES MEASURING PHYSICS RADIO DIRECTION-FINDING RADIO NAVIGATION SEMICONDUCTOR DEVICES TESTING |
| title | LIGHT PROPAGATION TIME PIXEL AND LIGHT PROPAGATION TIME SENSOR WITH CORRESPONDING PIXEL |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T15%3A40%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FRANKE,%20Matthias&rft.date=2021-05-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021141068A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |