LIGHT PROPAGATION TIME PIXEL AND LIGHT PROPAGATION TIME SENSOR WITH CORRESPONDING PIXEL

The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corn...

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Bibliographische Detailangaben
Hauptverfasser:	FRANKE, Matthias, RÖSSLER, Robert
Format:	Patent
Sprache:	eng
Schlagworte:	ANALOGOUS ARRANGEMENTS USING OTHER WAVES BASIC ELECTRIC ELEMENTS DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES MEASURING PHYSICS RADIO DIRECTION-FINDING RADIO NAVIGATION SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer.