MEMORY DEVICE BASED ON MULTI-BIT PERPENDICULAR MAGNETIC TUNNEL JUNCTION

Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between...

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Bibliographische Detailangaben
Hauptverfasser:	ASHIBA, Kei, BAEK, Jong Ung, JUNG, Sun Hwa, PARK, Jea Gun, JUN, Han Sol, CHOI, Jin Young, LEE, Hyun Gyu, PARK, Mi Ri
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.