SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity r...

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Bibliographische Detailangaben
Hauptverfasser: Park, Honglae, Chung, Chunhyung, Kim, Junsoo, Umezawa, Naoto, Yamada, Satoru
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity regions spaced apart from each other by the gate structure. The gate structure includes a gate dielectric layer in the second trench; a first metal layer on the gate dielectric layer; and a gate capping layer on the first metal layer. The gate dielectric layer includes D+ and ND2+ in an interface region, adjacent the first metal layer, and D is deuterium, N is nitrogen, and D+ is positively-charged deuterium.