METAL PART FOR PROCESS CHAMBER AND METHOD FOR FORMING LAYER OF METAL PART FOR PROCESS CHAMBER

METAL PART FOR PROCESS CHAMBER AND METHOD FOR FORMING LAYER OF METAL PART FOR PROCESS CHAMBER

Proposed are a metal part for a process chamber and a method of forming a thin film layer of the metal part for the process chamber. More particularly, proposed are a metal part for a process chamber and a method of forming a thin film layer of the metal part for the process chamber, wherein the met...

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Bibliographische Detailangaben
1. Verfasser: AHN, Bum Mo
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS THEREFOR
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:Proposed are a metal part for a process chamber and a method of forming a thin film layer of the metal part for the process chamber. More particularly, proposed are a metal part for a process chamber and a method of forming a thin film layer of the metal part for the process chamber, wherein the metal part is installed in a process chamber used in a display or semiconductor manufacturing process or constitutes a part of the process chamber, and a large thickness of the thin film layer of the metal part for the process chamber is easily secured, thereby achieving an extended lifespan by preventing cracks of the metal part for the process chamber, while preventing outgassing due to pores.