HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS

The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^...

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Hauptverfasser: KIM, Sangmi, KIM, Young Keun, PARK, Sangchol, KIM, Seunghyun, JUNG, Hyeonil
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creator KIM, Sangmi
KIM, Young Keun
PARK, Sangchol
KIM, Seunghyun
JUNG, Hyeonil
description The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^5 are the same as described in the specification.
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS
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