HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS

HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS

The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, Sangmi, KIM, Young Keun, PARK, Sangchol, KIM, Seunghyun, JUNG, Hyeonil
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^5 are the same as described in the specification.