HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS

The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KIM, Sangmi, KIM, Young Keun, PARK, Sangchol, KIM, Seunghyun, JUNG, Hyeonil
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^5 are the same as described in the specification.