BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING A COLLECTOR FOR A BIPOLAR JUNCTION TRANSISTOR

BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING A COLLECTOR FOR A BIPOLAR JUNCTION TRANSISTOR

A bipolar junction transistor is provided with a multilayer collector structure. The layers of the collector are individually grown in separate epitaxial growth stages. For a PNP transistor, each layer, after it is grown, is doped with a p-type dopant in a dedicated implant stage. By providing separ...

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Bibliographische Detailangaben
Hauptverfasser: Tooher, Shane, Coyne, Edward John, Geary, Shane Patrick, Brannick, Alan, O'Sullivan, Catriona Marie, Ó hAnnaidh, Breandán Pol Og
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A bipolar junction transistor is provided with a multilayer collector structure. The layers of the collector are individually grown in separate epitaxial growth stages. For a PNP transistor, each layer, after it is grown, is doped with a p-type dopant in a dedicated implant stage. By providing separate epitaxial growth stages and separate dopant implant stages for each layer of the collector, the dopant concentration profile in the collector region can be better controlled to optimize the speed and breakdown voltage of a bipolar junction transistor.