SEMICONDUCTOR DEVICE WITH BACKSIDE INDUCTOR USING THROUGH SILICON VIAS

SEMICONDUCTOR DEVICE WITH BACKSIDE INDUCTOR USING THROUGH SILICON VIAS

An approach to creating a semiconductor chip including a semiconductor substrate with one or more topside metal layers and one or more backside metal layers. The approach creates the semiconductor chip with one or more semiconductor devices with wiring interconnects in the one or more topside metal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Naser, Hassan, Friedman, Calist, Stasiak, Daniel L, Cooke, Matthew A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An approach to creating a semiconductor chip including a semiconductor substrate with one or more topside metal layers and one or more backside metal layers. The approach creates the semiconductor chip with one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate and one or more inductors in the one or more backside metal layer. Furthermore, the approach creates the semiconductor chip with one or more through silicon vias extending through the semiconductor substrate connecting the one or more inductors in the one or more backside metal layers and the one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate.