SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide semiconductor device includes a gate insulating film and a gate electrode made of p+ polysilicon doped with boron at a high concentration. Among boron impurities contained in the polysilicon of the gate electrode, 11B, which is one of the isotopes of boron, is contained 90% or more...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: ARAOKA, Tsuyoshi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A silicon carbide semiconductor device includes a gate insulating film and a gate electrode made of p+ polysilicon doped with boron at a high concentration. Among boron impurities contained in the polysilicon of the gate electrode, 11B, which is one of the isotopes of boron, is contained 90% or more, thereby reducing the amount of 10B diffusing from the polysilicon of the gate electrode into the gate insulating film. This results in a suppression of a threshold voltage shift that occurs when AC voltage is applied to the gate electrode.