SEMICONDUCTOR CHIP CONTACT STRUCTURE, DEVICE ASSEMBLY, AND METHOD OF FABRICATION

A semiconductor device structure may include a semiconductor device, disposed at least in part in a semiconductor substrate, and a first insulator layer, disposed on a surface of the semiconductor device, and comprising a first contact aperture, disposed within the first insulator layer. The semiconductor device structure may also include a first contact layer, comprising a first electrically conductive material, disposed over the insulator layer, and being in electrical contact with the semiconductor device through the first contact aperture, and a second insulator layer, disposed over the first contact layer, wherein the second insulator layer further includes a second contact aperture, displaced laterally from the first contact aperture, by a first distance. The semiconductor device structure may further include a second contact layer, comprising a second electrically conductive material, disposed over the second insulator layer, and electrically connected to the semiconductor device through the first and second contact aperture.