HYBRID ULTRASONIC TRANSDUCER AND METHOD OF FORMING THE SAME

A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric laye...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG, FUUN, CHENG, CHUN-REN, TSAI, YI HENG, LIN, CHING-HUI
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY FOR PERFORMING MECHANICAL WORK IN GENERAL GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICALVIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TRANSPORTING
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Beschreibung
Zusammenfassung:	A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.