STATIC RANDOM-ACCESS MEMORY CELL DESIGN

A six transistor SRAM memory cell design is discussed. An SRAM memory cell includes criss-crossed transistors in cross-coupled inverters to achieve a more compact form factor and simplify fabrication.

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Bibliographische Detailangaben
Hauptverfasser: Ervin, Joseph, Vincent, Benjamin
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A six transistor SRAM memory cell design is discussed. An SRAM memory cell includes criss-crossed transistors in cross-coupled inverters to achieve a more compact form factor and simplify fabrication.