SEMICONDUCTOR DEVICE

A semiconductor device is provided. The semiconductor device includes: a first semiconductor layer having an N-type of conductivity; and a second semiconductor layer that is formed on the first semiconductor layer, and including an active region, a frame region, and a termination region, wherein the active region includes a plurality of first P-pillars and first N-pillars formed between the plurality of first P-pillars, the frame region includes an upper frame region formed to extend in a first direction while having a P-type of conductivity, and a lower frame region that is formed below the upper frame region and including a plurality of second P-pillars and second N-pillars formed between the plurality of second P-pillars, and the termination region includes an upper termination region that extends in the first direction while having the P-type of conductivity, a middle termination region having the N-type of conductivity and formed below the upper termination region, and a lower termination region formed below the middle termination region and including a plurality of third P-pillars and third N-pillars formed between the plurality of third P-pillars.