SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD

A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, t...

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Bibliographische Detailangaben
Hauptverfasser: KIM, Jeong-Lim, KIM, Young Han, JEONG, Seok Yun, CHUNG, No Young, NOH, Myung Soo
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.