METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

A method of manufacturing a semiconductor device according to example embodiments includes: sequentially forming first through third insulating layers on a substrate; forming an opening by etching the first through third insulating layers; forming a conductive layer configured in the opening; formin...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Kyuha, Na, Hoonjoo, Moon, Kwangjin, Kim, Seokho, Jang, Joohee, Park, Jaehyung, Kang, Pilkyu, Hong, Yikoan
Format: Patent
Sprache:eng
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Zusammenfassung:A method of manufacturing a semiconductor device according to example embodiments includes: sequentially forming first through third insulating layers on a substrate; forming an opening by etching the first through third insulating layers; forming a conductive layer configured in the opening; forming a fourth insulating layer in the opening after the forming of the conductive layer; and removing a portion of an edge region of the substrate after the forming of the fourth insulating layer.