SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE

TMAH, hydrogen peroxide and water are mixed to make alkaline etching liquid containing TMAH, the hydrogen peroxide and the water and not containing hydrogen fluoride compound. The etching liquid is supplied to a substrate on which a polysilicon film and a silicon oxide film are exposed, thereby etch...

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Bibliographische Detailangaben
Hauptverfasser: NEGORO, Sei, KOBAYASHI, Kenji
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:TMAH, hydrogen peroxide and water are mixed to make alkaline etching liquid containing TMAH, the hydrogen peroxide and the water and not containing hydrogen fluoride compound. The etching liquid is supplied to a substrate on which a polysilicon film and a silicon oxide film are exposed, thereby etching the polysilicon film while inhibiting etching the silicon oxide film.