MEMORY DEVICE

According to one embodiment, a memory device includes a memory cell, a word line connected to the memory cell, a word line driver which generates a selection signal for the word line, a first transistor including a gate to which the selection signal generated by the word line driver is input, and a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAKAMURA, Dai, KUROSAWA, Tomonori
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:According to one embodiment, a memory device includes a memory cell, a word line connected to the memory cell, a word line driver which generates a selection signal for the word line, a first transistor including a gate to which the selection signal generated by the word line driver is input, and a drain which supplies a signal based on the selection signal to the word line, and a detection circuit which detects a value based on a current flowing through the first transistor during a verification period after writing data to the memory cell.