SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

A semiconductor device and method for forming same are provided. The method for forming a semiconductor device includes: providing a base; forming an interlayer dielectric layer over the base; forming contact holes by etching the interlayer dielectric layer; forming a barrier layer over the base in...

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Bibliographische Detailangaben
Hauptverfasser: XIAO, Zhangru, TONG, Zheyuan, ZHANG, Tiantian, JING, Xuezhen, YU, Hailong
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device and method for forming same are provided. The method for forming a semiconductor device includes: providing a base; forming an interlayer dielectric layer over the base; forming contact holes by etching the interlayer dielectric layer; forming a barrier layer over the base in the contact holes; and forming a metal layer over the barrier layer. The contact holes exposed a portion of a surface of the base. The metal layer fully filled the contact hole.