METHOD FOR IMPROVING FLATNESS OF SEMICONDUCTOR THIN FILM

The present invention provides a method for improving semiconductor thin film flatness, the method comprises providing a wafer; performing a vapor phase deposition to from an epitaxial layer on the wafer; wherein a gas suppresses epitaxial layer growth is added during the vapor phase deposition in o...

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Bibliographische Detailangaben
Hauptverfasser:	Dong, Chenhua, Lin, Chihhsin, Cao, Gongbai
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a method for improving semiconductor thin film flatness, the method comprises providing a wafer; performing a vapor phase deposition to from an epitaxial layer on the wafer; wherein a gas suppresses epitaxial layer growth is added during the vapor phase deposition in order to tune the thickness of the epitaxial layer on the wafer edge to improve flatness of the epitaxial layer. The vapor phase deposition of the present invention can improve the flatness of the epitaxial layer on the wafer edge by adding gases which suppress epitaxial layer growth to tune the thickness of the epitaxial layer on the wafer edge, therefore, the topography of the wafer is improved as well as the SFQR values are decreased.