METHOD FOR MEASURING CRITICAL DIMENSION OF PHOTORESIST PATTERN

Systems and methods for measuring a critical dimension of a photoresist are described. Measuring a critical dimension of a photoresist may include obtaining intensity data, setting a plurality of unit areas, extracting the intensity data, calculating corrected intensity data, and calculating critica...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	YE, SANG HEON
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Systems and methods for measuring a critical dimension of a photoresist are described. Measuring a critical dimension of a photoresist may include obtaining intensity data, setting a plurality of unit areas, extracting the intensity data, calculating corrected intensity data, and calculating critical dimension data. Obtaining the intensity data by scanning the target substrate may include setting a first scan area and a second scan area, obtaining first intensity data, and obtaining second intensity data, and comparing the first intensity data and the second intensity data.