METHOD OF FORMING OXIDE FILM INCLUDING TWO NON-OXYGEN ELEMENTS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE

METHOD OF FORMING OXIDE FILM INCLUDING TWO NON-OXYGEN ELEMENTS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE

A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source materi...

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Bibliographische Detailangaben
Hauptverfasser: RYU, Seungmin, KIM, Haeryong, KIM, Younsoo, CHO, Younjoung, SONG, Jeonggyu, WOO, Changsu, JUNG, Kyooho, MOON, Sunmin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.