MULTILAYER STRUCTURE INSPECTION APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE FABRICATING METHOD USING THE INSPECTION METHOD

Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the refl...

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Bibliographische Detailangaben
Hauptverfasser:	Yang, Yu-sin, Ryu, Sung-yoon, Jun, Chung-sam, Kwak, Hyun-su, Kim, Jung-won
Format:	Patent
Sprache:	eng
Schlagworte:	COLORIMETRY GAMMA RAY OR X-RAY MICROSCOPES INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES IRRADIATION DEVICES MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS RADIATION PYROMETRY TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TESTING
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Beschreibung
Zusammenfassung:	Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.