SEMICONDUCTOR STRUCTURE AND METHOD OF FORMATION

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMATION

The present disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a substrate, a first device, a second device, a fin, a first gate dielectric layer, a second gate dielectric layer, and a cut region of the fin. The second device is adjac...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: CHOU, YI-HSIEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a substrate, a first device, a second device, a fin, a first gate dielectric layer, a second gate dielectric layer, and a cut region of the fin. The second device is adjacent to the first device. The fin is disposed on the substrate between the first device and the second device. The first gate dielectric layer is disposed on a first portion of the fin, and the second gate dielectric layer is disposed on a second portion of the fin. The cut region of the fin is formed within a trench between the first device and the second device.